In2Se3 is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued its characterization over the years, with reported band gaps varying in an unacceptable range of 1 eV. Using first-principles calculations based on density functional theory and the HSE06 hybrid functional, we investigated the structural and electronic properties of four layered phases of In2Se3, addressing their relative stability and the nature of their fundamental band gaps, i.e., direct {\em versus} indirect. Our results show large disparities between fundamental and optical gaps. The absorption coefficients are found to be as high as that in direct-gap III-V semiconductors. The band alignment with respect to conventional semiconductors indicate a tendency to n-type conductivity, explaining recent experimental observations.
@article{arxiv.1806.01251,
title = {Large Disparity Between Optical and Fundamental Band Gaps in Layered In2Se3},
author = {Wei Li and Fernando P. Sabino and Felipe Crasto de Lima and Tianshi Wang and Roberto H. Miwa and Anderson Janotti},
journal= {arXiv preprint arXiv:1806.01251},
year = {2018}
}