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The metal-insulator transition in semiconductors

Statistical Mechanics 2009-02-26 v1
Authors: Fedor V. Prigara
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Abstract

The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.

Keywords

metal-insulator transition thermal properties of materials thermal physics

Cite

@article{arxiv.0902.4350,
  title  = {The metal-insulator transition in semiconductors},
  author = {Fedor V. Prigara},
  journal= {arXiv preprint arXiv:0902.4350},
  year   = {2009}
}

Comments

3 pages, Conference paper (Semiconductors 2009, 28 Sep - 3 Oct 2009, Novosibirsk-Tomsk, Russia)

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