Related papers: The metal-insulator transition in semiconductors
A relation between the energy of an elementary `insulating' excitation corresponding to the metal-insulator transition and the bandgap width in a semiconductor is obtained. An effect of atomic relaxation on the temperature and pressure…
The dependences of the fundamental transition on the semiconductor quantum dot size obtained experimentally at various temperatures using different measuring methods are analyzed and compared. The possibility to extrapolate the results for…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
It is shown that a ferroelastic lattice distortion is associated with the superconducting transition both in low- and high-temperature superconductors. A low-temperature ferroelastic transition in crystalline solids produces also a maximum…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…
Defects are crucial in determining the overall physical properties of semiconductors. Generally, the charge-state transition level (TEL), one of the key physical quantities that determines the dopability of defects in semiconductors, is…
It is shown that a ferroelastic lattice distortion is associated with the superconducting transition both in low- and high-temperature superconductors. In layered tetragonal superconductors with a sufficiently high transition temperature, a…
We have measured the differential resistance of mesoscopic gold wires of different lengths connected to an aluminum superconductor as a function of temperature and voltage. Our experimental results differ substantially from theoretical…
We present a microscopic picture rationalizing the surprisingly steep decrease of the band gap with temperature in insulators, crystalline or otherwise. The gap narrowing largely results from fluctuations of long-wavelength optical…
It is shown that a sufficiently strong external electric field causes a decrease in the transition temperature of ferroelectric, antiferroelectric, and metal-insulator transitions. The temperature dependence of the critical electric field…
We present photoluminescence studies as a function of temperature from a series of conjugated polymers and a conjugated molecule with distinctly different backbone conformations. The organic materials investigated here are: planar…
It is shown that the temperature dependence of the value of energy gap in superconductors can be classified as the order-disorder transition with its characteristic features. The obtained relationship between the critical temperature and…
The ``S-shape'' (decrease-increase-decrease) temperature dependence of luminescence peak shift from semiconductors is considered. A luminescence model for localized state ensemble was employed to interpret this anomalous temperature…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
We study the dependence of the superconducting gaps on both the disorder and the temperature within the two-band model for iron-based materials. In the clean limit, the system is in the $s_\pm$ state with the sign-changing gaps. Scattering…
At low temperature using thermodynamics of irreversible processes the general expressions for the temperature dependence of the thermopower in the case of the hopping conductivity for disordered materials are found. The account of influence…
We consider a two dimensional semiconductor with a local attraction among the carriers. We study the ground state of this system as a function of the semiconductor gap. We find a direct transition from a superconducting to an insulating…
Although most insulators are expected to undergo insulator to metal transition on lattice compression, tetrahedral semiconductors Si, GaAs and InSb can become metallic on compression as well as by expansion. We focus on the transition by…
The electromagnetic response of a system with two planes per unit cell involves, in addition to the usual intraband contribution, an added interband term. These transitions affect the temperature dependence and the magnitude of the zero…