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The EDELWEISS-III direct dark matter search experiment uses cryogenic HP-Ge detectors Fully covered with Inter-Digitized electrodes (FID). They are operated at low fields ($<1\;\mathrm{V/cm}$), and as a consequence charge-carrier trapping…

By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects…

Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the…

Non-van der Waals two-dimensional (2D) materials derived from strongly bonded non-layered crystals have recently emerged as a novel and rising platform for nanoscale research. While uncovering and tuning their (opto-)electronic, catalytic,…

Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The…

Chiral edge modes inherent to the topological quantum anomalous Hall (QAH) effect are a pivotal topic of contemporary condensed matter research aiming at future quantum technology and application in spintronics. A large topological gap is…

A new nano-lithography technique compatible with conducting oxide interfaces, which requires a single lithographic step with no additional amorphous layer deposition or etching, is presented. It is demonstrated on SrTiO3/LaAlO3 interface…

Transport measurements on the two dimensional electron system in Al2O3 SrTiO3 heterostructures indicate significant noncrystalline anisotropic behavior below T = 30 K. Lattice dislocations in SrTiO3 and interfacial steps are suggested to be…

Nanoscale control of the quasi-two-dimensional electron gas at the LaAlO3/SrTiO3 (LAO/STO) interface by a conductive probe tip has triggered the development of a number of electronic devices. While the spatial distribution of the…

Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered…

Characteristic features of tunneling times for dissipative tunneling of a particle through a rectangular barrier are studied within a semiclassical model involving dissipation in the form of a velocity dependent frictional force. The…

The effects of different substrates on the off state leakage current in gallium nitride planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current voltage characteristics.

Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical…

The analysis of the electronic surface properties of transition metal oxides being key materials for future nanoelectronics requires a direct characterization of the conductivity with highest spatial resolution. Using local conductivity…

In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility ({\mu}H) exceeding 100 cm2/Vs at room temperature (RT). It is found that the deposition of top hafnium oxide…

The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an…

Microwave study using cavity perturbation technique revealed that the conductivity of antiferromagnet (NH$_3$)K$_{3-x}$Rb$_x$C$_{60}$ at 200K is already 3-4 orders of magnitude smaller than those of superconductors, K$_3$C$_{60}$ and…

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…

We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gated junction field-effect transistors using a range of LaAlO_3 thicknesses as the top gate insulator. Gated Hall bars show near ideal transistor characteristics at room…

We present results of combined density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations, which show that the Mott insulator LaTiO3 undergoes an insulator-to-metal transition under compressive epitaxial strain of…