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Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and…

Emerging Technologies · Computer Science 2021-02-03 Guodong Yin , Yi Cai , Juejian Wu , Zhengyang Duan , Zhenhua Zhu , Yongpan Liu , Yu Wang , Huazhong Yang , Xueqing Li

This project explores the use of non-volatile synapses in neuromorphic computing for pattern recognition tasks through a comprehensive simulation-based approach. The main approach is through spintronic synapses, which leverage the…

Mesoscale and Nanoscale Physics · Physics 2025-01-08 Luis Sosa , Minhyeok Wi , Miguel Barrera , Imran Nasrullah , Yingying Wu

As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units.…

Emerging Technologies · Computer Science 2026-02-05 Thomas Neuner , Henriette Padberg , Lior Kornblum , Eilam Yalon , Pedram Khalili Amiri , Shahar Kvatinsky

Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…

DRAM-based main memories have read operations that destroy the read data, and as a result, must buffer large amounts of data on each array access to keep chip costs low. Unfortunately, system-level trends such as increased memory contention…

Hardware Architecture · Computer Science 2018-12-18 Justin Meza , Jing Li , Onur Mutlu

The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…

Mesoscale and Nanoscale Physics · Physics 2024-11-13 Yixiao Qiao , Zhengde Xu , Zhuo Xu , Yumeng Yang , Zhifeng Zhu

Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…

Emerging Technologies · Computer Science 2016-12-20 Xinyu Wu , Vishal Saxena

Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…

The design of the buffer manager in database management systems (DBMSs) is influenced by the performance characteristics of volatile memory (DRAM) and non-volatile storage (e.g., SSD). The key design assumptions have been that the data must…

Databases · Computer Science 2019-01-31 Joy Arulraj , Andy Pavlo , Krishna Teja Malladi

Neuromorphic computing systems uses non-volatile memory (NVM) to implement high-density and low-energy synaptic storage. Elevated voltages and currents needed to operate NVMs cause aging of CMOS-based transistors in each neuron and synapse…

Neural and Evolutionary Computing · Computer Science 2021-05-06 Shihao Song , Jui Hanamshet , Adarsha Balaji , Anup Das , Jeffrey L. Krichmar , Nikil D. Dutt , Nagarajan Kandasamy , Francky Catthoor

Resistive Random Access Memory (RRAM) and Phase Change Memory (PCM) devices have been popularly used as synapses in crossbar array based analog Neural Network (NN) circuit to achieve more energy and time efficient data classification…

Applied Physics · Physics 2019-10-30 Divya Kaushik , Utkarsh Singh , Upasana Sahu , Indu Sreedevi , Debanjan Bhowmik

Non-volatile Memory (NVM) technologies present a promising alternative to traditional volatile memories such as SRAM and DRAM. Due to the limited availability of real NVM devices, simulators play a crucial role in architectural exploration…

Hardware neural networks that implement synaptic weights with embedded non-volatile memory, such as spin torque memory (ST-MRAM), are a major lead for low energy artificial intelligence. In this work, we propose an approximate storage…

Emerging Technologies · Computer Science 2018-10-26 Nicolas Locatelli , Adrien F. Vincent , Damien Querlioz

The Perpendicular Shape Anisotropy Spin Transfer Torque Magnetic Random Access Memory (PSA-STT-MRAM) is a recent concept proposed to maintain the thermal stability of standard MRAM at small diameters, considering thick vertical pillars as…

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability…

Materials Science · Physics 2015-09-02 Kyungmi Song , Kyung-Jin Lee

A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to…

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…

This paper reviews memory technologies used in Field-Programmable Gate Arrays (FPGAs) for neuromorphic computing, a brain-inspired approach transforming artificial intelligence with improved efficiency and performance. It focuses on the…

Hardware Architecture · Computer Science 2025-02-25 Dexter Le , Baran Arig , Murat Isik , I. Can Dikmen , Teoman Karadag

Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance…

Hardware Architecture · Computer Science 2023-08-07 Sourjya Roy , Cheng Wang , Anand Raghunathan

Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…

Applied Physics · Physics 2020-07-03 Min Wang , Zhaohao Wang , Chao Wang , Weisheng Zhao
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