Related papers: SMART: Secure Magnetoelectric AntifeRromagnet-Base…

Resistive random-access memory (RRAM) provides an excellent platform for analog matrix computing (AMC), enabling both matrix-vector multiplication (MVM) and the solution of matrix equations through open-loop and closed-loop circuit…

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…

The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to…

As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic…

We describe a new class of systems exhibiting return point memory (RPM) that are different from those discussed before in the context of ferromagnets. We show numerically that one dimensional random Ising antiferromagnets have RPM, when…

Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are…

Digital In-memory computing improves energy efficiency and throughput of a data-intensive process, which incur memory thrashing and, resulting multiple same memory accesses in a von Neumann architecture. Digital in-memory computing involves…

Novel non-volatile memory (NVM) technologies offer high-speed and high-density data storage. In addition, they overcome the von Neumann bottleneck by enabling computing-in-memory (CIM). Various computer architectures have been proposed to…

The memory controller is in charge of managing DRAM maintenance operations (e.g., refresh, RowHammer protection, memory scrubbing) to reliably operate modern DRAM chips. Implementing new maintenance operations often necessitates…

The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit (CPU) and memory, with concomitant limitations in the actual execution speed. However, it has been recently…

With the emergence of Non-Volatile Memories (NVMs) and their shortcomings such as limited endurance and high power consumption in write requests, several studies have suggested hybrid memory architecture employing both Dynamic Random Access…

Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have…

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

Recent work [1,2] suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of DMI than switching a typical ferromagnet of the same dimensions and perpendicular magnetic…

In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and…

The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM…

The emergence of high-density byte-addressable non-volatile memory (NVM) is promising to accelerate data- and compute-intensive applications. Current NVM technologies have lower performance than DRAM and, thus, are often paired with DRAM in…

Continual learning is considered a promising step towards next-generation Artificial Intelligence (AI), where deep neural networks (DNNs) make decisions by continuously learning a sequence of different tasks akin to human learning…

Oblivious RAM (ORAM) is a provable secure primitive to prevent access pattern leakage on the memory bus. It serves as the intermediate layer between the trusted on-chip components and the untrusted external memory systems to modulate the…

Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…