Related papers: SMART: Secure Magnetoelectric AntifeRromagnet-Base…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-efficient computation over conventional DRAM-based approaches.…
Modern computing systems are embracing hybrid memory comprising of DRAM and non-volatile memory (NVM) to combine the best properties of both memory technologies, achieving low latency, high reliability, and high density. A prominent…
After nearly a decade of anticipation, scalable nonvolatile memory DIMMs are finally commercially available with the release of Intel's 3D XPoint DIMM. This new nonvolatile DIMM supports byte-granularity accesses with access times on the…
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…
Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an…
The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external…
Recurrent Neural Networks (RNNs) are an important class of neural networks designed to retain and incorporate context into current decisions. RNNs are particularly well suited for machine learning problems in which context is important,…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…
Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles,…
As the High Performance Computing world moves towards the Exa-Scale era, huge amounts of data should be analyzed, manipulated and stored. In the traditional storage/memory hierarchy, each compute node retains its data objects in its local…
As process technology continues to scale aggressively, circuit aging in a neuromorphic hardware due to negative bias temperature instability (NBTI) and time-dependent dielectric breakdown (TDDB) is becoming a critical reliability issue and…
Frequent-pattern mining is a common approach to reveal the valuable hidden trends behind data. However, existing frequent-pattern mining algorithms are designed for DRAM, instead of persistent memories (PMs), which can lead to severe…
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
Phase change memory (PCM) is one of the leading candidates for neuromorphic hardware and has recently matured as a storage class memory. Yet, energy and power consumption remain key challenges for this technology because part of the PCM…
Several emerging technologies for byte-addressable non-volatile memory (NVM) have been considered to replace DRAM as the main memory in computer systems during the last years. The disadvantage of a lower write endurance, compared to DRAM,…
Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators…
Accelerating finite automata processing is critical for advancing real-time analytic in pattern matching, data mining, bioinformatics, intrusion detection, and machine learning. Recent in-memory automata accelerators leveraging SRAMs and…