Related papers: SMART: Secure Magnetoelectric AntifeRromagnet-Base…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive applications, and SRAM technology scaling and leakage power limits the efficiency of embedded memories. Future on-chip storage will need higher density…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…
Non-volatile memory (NVM) is a class of promising scalable memory technologies that can potentially offer higher capacity than DRAM at the same cost point. Unfortunately, the access latency and energy of NVM is often higher than those of…
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Non-volatile memory (NVM) provides a scalable and power-efficient solution to replace DRAM as main memory. However, because of relatively high latency and low bandwidth of NVM, NVM is often paired with DRAM to build a heterogeneous memory…
The byte-addressable Non-Volatile Memory (NVM) is a promising technology since it simultaneously provides DRAM-like performance, disk-like capacity, and persistency. The current NVM deployment is symmetric, where NVM devices are directly…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
The ultimate goal of multiferroic research is the development of new-generation non-volatile memory devices, the so-called magnetoelectric (ME) memories, where magnetic bits are controlled via electric fields without the application of…
Emerging Non-Volatile Memories (NVMs) are promising contenders for building future memory systems. On the other side, unlike DRAM systems, NVMs can retain data even after power loss and thus enlarge the attack surface. While data encryption…
Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non-volatile memory with ultralow power consumption. However, the…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…
Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal…
Non-volatile memory (NVM) is an emerging technology, which has the persistence characteristics of large capacity storage devices(e.g., HDDs and SSDs), while providing the low access latency and byte-addressablity of traditional DRAM memory.…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
The current mobile applications have rapidly growing memory footprints, posing a great challenge for memory system design. Insufficient DRAM main memory will incur frequent data swaps between memory and storage, a process that hurts…