English

Simulating Pattern Recognition Using Non-volatile Synapses: MRAM, Ferroelectrics and Magnetic Skyrmions

Mesoscale and Nanoscale Physics 2025-01-08 v1 Applied Physics

Abstract

This project explores the use of non-volatile synapses in neuromorphic computing for pattern recognition tasks through a comprehensive simulation-based approach. The main approach is through spintronic synapses, which leverage the electron's spin properties to achieve efficient data processing and storage. This offers a promising alternative to traditional electronic synapses which require constant power recharge to prevent data leakage. The goal is to develop and simulate a neural network model that incorporates spintronic synapses, examining their potential to perform complex pattern recognition tasks such as image and sound classification. By building a simulation environment, we will replicate various models, including spin transfer torque based MRAM, voltage controlled magnetic anisotropy based MRAM, ferroelectric field effect transistors, and skyrmion based nanotrack for synaptic devices, to evaluate their performance and compare results across different non-volatile implementations. The findings will highlight the effectiveness of spintronic synapses in creating low-power, high-performance neuromorphic hardware, providing valuable insights into their application for future energy-efficient artificial intelligence systems.

Keywords

Cite

@article{arxiv.2501.03450,
  title  = {Simulating Pattern Recognition Using Non-volatile Synapses: MRAM, Ferroelectrics and Magnetic Skyrmions},
  author = {Luis Sosa and Minhyeok Wi and Miguel Barrera and Imran Nasrullah and Yingying Wu},
  journal= {arXiv preprint arXiv:2501.03450},
  year   = {2025}
}

Comments

17 pages, 6 figure

R2 v1 2026-06-28T20:58:14.727Z