Related papers: Realization of a Valley Superlattice
Valley degrees of freedom offer a potential resource for quantum information processing if they can be effectively controlled. We discuss an optical approach to this problem in which intense light breaks electronic symmetries of a…
Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state…
Valleytronics, that uses the valley index or valley pseudospin to encode information, has emerged as an interesting field of research in two-dimensional (2D) systems with promising device applications. Spin-orbit coupling (SOC) and…
2D ferrovalley materials that exhibit spontaneous valley polarization are both fundamentally intriguing and practically appealing to be used in valleytronic devices. Usually, the research on 2D ferrovalley materials is mainly focused on…
Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…
Monolayer transition-metal dichalcogenides possess a pair of degenerate helical valleys in the band structure that exhibit fascinating optical valley polarization. Optical valley polarization, however, is limited by carrier lifetimes of…
Layered oxide heterostructures are the new routes to tailor desired electronic and magnetic phases emerging from competing interactions involving strong correlation, orbital hopping, tunnelling and lattice coupling phenomena. Here, we…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field…
Altermagnets have recently been recognized as a distinct class of magnetic materials characterized by alternative spin-split electronic structures without net magnetization. Despite intensive studies on their single-particle spintronic and…
Various physical phenomena have been discovered by tuning degrees of freedom, among which there is the degree of freedom (DOF) -- "valley". The typical valley materials are characterized by two degenerate valley states protected by…
The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin)…
Increasing the speed limits of conventional electronics requires innovative approaches to manipulate other quantum properties of electrons besides their charge. An alternative approach utilizes the valley degree of freedom in…
In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and control of time-reversal symmetry by optical or magnetic…
Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley…
Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired…
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…
Antiferromagnetic superlattices (AFSL) are proposed based on the buckled hexagonal two-dimensional materials, which can be realized by the proximity effect of the periodically deposited antiferromagnets. It is found that the AF proximity…
Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that…
The valley degeneracy in Si qubit devices presents problems for their use in quantum information processing. It is possible to lift this degeneracy by using the Wiggle Well architecture, in which an oscillatory Ge concentration couples the…