Related papers: Realization of a Valley Superlattice
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
Altermagnets (AM) are a recently discovered third class of collinear magnets, and have been attracting significant interest in the field of condensed matter physics. Here, based on first-principles calculations and theoretical analysis, we…
The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples…
The two-dimensional electron gas is of fundamental importance in quantum many-body physics. We study a minimal extension of this model with $C_4$ (as opposed to full rotational) symmetry and an electronic dispersion with two valleys with…
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by…
The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials.…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
Monolayer valley semiconductors, such as tungsten diselenide (WSe$_2$), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry…
Layered materials can possess valleys that are indistinguishable from one another except for the momentum. These valleys are individually addressable in momentum space at the K and K' points in the first Brillouin zone. Such valley…
Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon…
Developing alternative paradigms of electronics beyond silicon technology requires the exploration of fundamentally new physical mechanisms, such as the valley specific phenomena in hexagonal two-dimensional materials. We realize ballistic…
The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…
The valley splitting of 2D electrons in doubly-gated silicon-on-insulator quantum wells is studied by low temperature transport measurements under magnetic fields. At the buried thermal-oxide SiO$_{2}$ interface, the valley splitting…
Quantum materials constitute a novel category of substances wherein quantum effects and electron-electron (e-e) interactions give rise to unforeseen phenomena on a macroscopic scale. Of particular interest within the realm of quantum…
While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…
Van der Waals heterostructures provide a rich platform for emergent physics due to their tunable hybridization of electronic orbital- and spin-degrees of freedom. Here, we show that a heterostructure formed by twisted bilayer graphene…
Transition metal dichalcogenides represent an ideal testbed to study excitonic effects, spin-related phenomena and fundamental light-matter coupling in nanoscopic condensed matter systems. In particular, the valley degree of freedom, which…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
Monolayer semiconducting transition metal dichalcogenides possess broken inversion symmetry and strong spin-orbit coupling, which leads to unique spin-valley locking effect. In 2H stacked pristine multilayers, the spin-valley locking yields…
In addition to spin, electrons in many materials possess an additional pseudo-spin degree of freedom known as 'valley'. In materials where the spin and valley degrees of freedom are weakly coupled, they can be both excited and controlled…