Related papers: Realization of a Valley Superlattice
By using different widths for two AlAs quantum wells comprising a bilayer system, we force the X-point conduction-band electrons in the two layers to occupy valleys with different Fermi contours, electron effective masses, and g-factors.…
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…
Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring…
We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…
Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…
The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and…
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed…
Valleytronics aims to control electrons in a valley-specific manner for quantum information manipulation. Due to their strong in-plane anisotropy, which enables polarization-controlled optical transitions to distinct nondegenerate valleys,…
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box…
A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this…
A new degree of freedom, the valley pseudospin, emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2) and has attracted great scientific interest. The capability to manipulate the valley pseudospin, in analogy to…
Recently, altermagnets demonstrate numerous newfangle physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, that are anticipated to enable innovative spintronic devices. However, the rare…
Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals…
Terahertz photoconductivity of $100~\mu$m and $20~\mu$m Hall bars fabricated from narrow AlAs quantum wells (QWs) of different widths is investigated in this paper. The photoresponse is dominated by collective magnetoplasmon excitations…
In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…
Moir\'e superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. While the valley character of the…