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Related papers: Realization of a Valley Superlattice

200 papers

For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new…

Materials Science · Physics 2021-01-27 Chen Yang , Zhigang Song , Xiaotian Sun , Jing Lu

The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for…

Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moir\'e systems, where a lattice mismatch or twist between…

We report measurements of the spin susceptibility, $\chi\propto g_v g^*m^*$, in an AlAs two-dimensional electron system where, via the application of in-plane stress, we transfer electrons from one conduction-band valley to another ($g_v$…

Strongly Correlated Electrons · Physics 2007-05-23 Y. P. Shkolnikov , K. Vakili , E. P. De Poortere , M. Shayegan

Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…

Mesoscale and Nanoscale Physics · Physics 2018-09-12 C. W. J. Beenakker , N. V. Gnezdilov , E. Dresselhaus , V. P. Ostroukh , Y. Herasymenko , I. Adagideli , J. Tworzydlo

Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital…

Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent…

Materials Science · Physics 2017-07-21 Yen-Jung Chen , Jeffrey D. Cain , Teodor K. Stanev , Vinayak P. Dravid , Nathaniel P. Stern

The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without…

Mesoscale and Nanoscale Physics · Physics 2019-04-23 Terry Y. T. Hung , Kerem Y. Camsari , Shengjiao Zhang , Pramey Upadhyaya , Zhihong Chen

Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides…

Materials Science · Physics 2018-01-17 Lei Xu , Ming Yang , Lei Shen , Jun Zhou , Tao Zhu , Yuan Ping Feng

We study a minimal Hubbard model for electronically driven superconductivity in a correlated flat mini-band resulting from the superlattice modulation of a twisted graphene multilayer. The valley degree of freedom drastically modifies the…

Strongly Correlated Electrons · Physics 2018-08-30 Cenke Xu , Leon Balents

The two inequivalent valleys in graphene preclude the protection against inter-valley scattering offered by an odd-number of Dirac cones characteristic of Z2 topological insulator phases. Here we propose a way to engineer a chiral…

Materials Science · Physics 2015-07-14 Yafei Ren , Xinzhou Deng , Changsheng Li , Jeil Jung , Changgan Zeng , Zhenyu Zhang , Qian Niu , Zhenhua Qiao

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the…

We report low temperature magnetotransport measurements on a high mobility (\mu=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field data indicate a six-fold valley degenerate system, we observe…

Mesoscale and Nanoscale Physics · Physics 2014-01-29 Tomasz M. Kott , Binhui Hu , S. H. Brown , B. E. Kane

A class of septuple-atomic-layer two-dimensional (2D) materials, MA$_2$Z$_4$, is sought as an alternative to 2D hexagonal transition metal dichalcogenides in the field of valleytronics and spintronics. In these materials, the structural…

Materials Science · Physics 2023-06-27 Sajjan Sheoran , Ankita Phutela , Ruman Moullik , Saswata Bhattacharya

Valley degree of freedom besides spin is a promising candidate as a carrier of information. Spintronics has come a long way and spin modulation can be realized by quantum interference and spin-orbit coupling effect. However, the control of…

Mesoscale and Nanoscale Physics · Physics 2025-08-08 Hui-Ying Mu , Nie-Wei Wang , Ying-Na Du , Xing-Tao An , Jian-Jun Liu

We find that the motion of the valley electrons -- electronic states close to the ${\rm K}$ and ${\rm K'}$ points of the Brillouin zone -- is confined into two dimension when the layers of MoS$_{2}$ follow the 3R stacking, while in the 2H…

We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show…

Altermagnets represent a newly identified third class of collinear magnets and have recently emerged as a focal point in condensed matter physics. In this work, through first-principles calculations and theoretical analysis, we identify…

Materials Science · Physics 2025-12-15 An-Dong Fan , Yong-Kun Wang , Jin-Yang Li , Si Li

Interactions between stacked two-dimensional (2D) atomic crystals can radically change their properties, leading to essentially new materials in terms of the electronic structure. Here we show that monolayers placed on an atomically flat…

Modulation of electronic properties of materials by electric fields is central to the operation of modern semiconductor devices, providing access to complex electronic behaviors and greater freedom in tuning the energy bands of materials.…

Materials Science · Physics 2024-01-09 Ashwin Ramasubramaniam , Doron Naveh