For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new kind of hexagonal 2D MXene, MoSi2N4, was successfully synthesized with large size, excellent ambient stability, and considerable hole mobility. In this paper, based on the first-principles calculations, we predict that the valley-contrast properties can be realized in monolayer MoSi2N4 and its derivative MoSi2As4. Beyond the traditional two-level valleys, the valleys in monolayer MoSi2As4 are multiple-folded, implying a new valley dimension. Such multiple-folded valleys can be described by a three-band low-power Hamiltonian. This study presents the theoretical advance and the potential applications of monolayer MoSi2N4 and MoSi2As4 in valleytronic devices, especially multiple information processing.
@article{arxiv.2010.10764,
title = {Valley pseudospin in monolayer MoSi2N4 and MoSi2As4},
author = {Chen Yang and Zhigang Song and Xiaotian Sun and Jing Lu},
journal= {arXiv preprint arXiv:2010.10764},
year = {2021}
}