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The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW…

For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The…

Materials Science · Physics 2014-05-13 Yuchen Du , Lingming Yang , Jingyun Zhang , Han Liu , Kausik Majumdar , Paul D. Kirsch , Peide D. Ye

Photocurrent in photodetectors incorporating van der Waals materials is typically produced by a combination of photocurrent generation mechanisms that occur simultaneously during operation. Because of this, response times in these devices…

Mesoscale and Nanoscale Physics · Physics 2015-12-10 Joshua O. Island , Sofya I. Blanter , Michele Buscema , Herre S. J. van der Zant , Andres Castellanos-Gomez

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…

We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not…

Mesoscale and Nanoscale Physics · Physics 2011-10-27 David Jimenez , Oana Moldovan

Despite the unsettled mechanism of electricity generation from the continuous flow of liquids on a surface, the charge-discharge theory has been widely accepted for alternating current (AC) generation from a moving droplet. It has been…

Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive…

Mesoscale and Nanoscale Physics · Physics 2017-03-08 François Léonard , Catalin D. Spataru , Michael Goldflam , David W. Peters , Thomas E. Beechem

A p-n junction is the basic building block for various semiconductor devices. A Schottky diode has characteristics that are essentially similar to those of the p-n junction diode. As is known, the leakage currents of p-n and Schottky…

Applied Physics · Physics 2025-12-24 Jianming Li

The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications,…

Mesoscale and Nanoscale Physics · Physics 2015-07-30 Xiaoqiang Li , Shengjiao Zhang , Peng Wang , Huikai Zhong , Zhiqian Wu , Hongshen Chen , Cheng Liu , Shisheng Lin

Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to…

Mesoscale and Nanoscale Physics · Physics 2024-05-14 Zhongzhong Luo , Zhihao Yu , Xiangqian Lu , Wei Niu , Yao Yu , Yu Yao , Fuguo Tian , Chee Leong Tan , Huabin Sun , Li Gao , Wei Qin , Yong Xu , Qiang Zhao , Xiang-Xiang Song

We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from…

The supercurrent diode effect (SDE) describes superconducting systems where the magnitude of the superconducting-to-normal state switching current differs for positive and negative current bias. Despite the ubiquity of such diode effects in…

Superconductivity · Physics 2026-02-11 Joseph J. Cuozzo , François Léonard

Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at room temperature. Electrical performance and degradation…

In view of a study on spin-polarized photodiodes, the helicity-dependent photocurrent in a Fe/x-AlOx/p-GaAs Schottky diode is measured at room temperature by illuminating a circularly polarized light beam (785 nm) either horizontally on the…

Mesoscale and Nanoscale Physics · Physics 2017-02-28 Ronel Christian Roca , Nozomi Nishizawa , Kazuhiro Nishibayashi , Hiro Munekata

The superconducting diode effect (SDE)- manifested as directional, dissipationless supercurrents - is pivotal for realizing energy-efficient superconducting logic and memory technologies. Achieving high-efficiency SDE without external…

Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to…

Research on current-induced domain wall (DW) motion in heavy metal/ferromagnet structures is crucial for advancing memory, logic, and computing devices. Here, we demonstrate that adjusting the angle between the DW conduit and the current…

Mesoscale and Nanoscale Physics · Physics 2025-03-21 Elena M. Stetco , Traian Petrisor , Ovidiu A. Pop , Mohamed Belmeguenai , Ioan M. Miron , Mihai S. Gabor

Optical second harmonic generation (SHG) is studied from multilayer graphene films in the presence of DC electric current flowing in the sample plane. Graphene layers are manufactured by chemical vapour deposition (CVD) technique and…

Mesoscale and Nanoscale Physics · Physics 2015-06-04 Anton Y. Bykov , Tatiana V. Murzina , Maxim G. Rybin , Elena D. Obraztsova

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Materials Science · Physics 2009-11-10 V. Podzorov , M. E. Gershenson , Ch. Kloc , R. Zeis , E. Bucher

We report a method that uses van der Waals interactions to transfer continuous, high-quality graphene films from Ge(110) to a different substrate held by hexagonal boron nitride carriers in a clean, dry environment. The transferred films…

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