The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications, GaAs is superior to silicon as it has a direct band gap of 1.42 eV and its electron mobility is six times of that of silicon. However, graphene/GaAs solar cell has been rarely explored. Herein, we report graphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5% without and with anti-reflection layer on graphene, respectively. The Eta of 15.5% is higher than the state of art efficiency for graphene/Si system (14.5%). Furthermore, our calculation points out Eta of 25.8% can be reached by reasonably optimizing the open circuit voltage, junction ideality factor, resistance of graphene and metal/graphene contact. This research strongly support graphene/GaAs hetero-structure solar cell have great potential for practical applications.
@article{arxiv.1409.3500,
title = {High performance solar cells based on graphene-GaAs heterostructures},
author = {Xiaoqiang Li and Shengjiao Zhang and Peng Wang and Huikai Zhong and Zhiqian Wu and Hongshen Chen and Cheng Liu and Shisheng Lin},
journal= {arXiv preprint arXiv:1409.3500},
year = {2015}
}
Comments
The conversion efficiency mentioned in this manuscript is caculated accurately based on the J-V curve and effective functional area