We develop a simple and scalable graphene patterning method using electron-beam or ultraviolet lithography followed by a lift-off process. This method, with the merits of: high pattern resolution and high alignment accuracy, free from additional etching or harsh process, universal to arbitrary substrates, compatible to Si microelectronic technology, can be easily applied to diverse graphene-based devices, especially in array-based applications, where large-scale graphene patterns are desired. We have applied this method to fabricate CdSe nanobelt (NB)/graphene Schottky junction solar cells, which have potential application in integrated nano-optoelectronic systems. Typical as-fabricated solar cell shows excellent photovoltaic behavior with an open-circuit voltage of ~ 0.51 V, a short-circuit current density of ~ 5.75 mA/cm2, and an energy conversion efficiency of ~1.25%. We attribute the high performance of the cell to the as-patterned high-performance graphene, which can form an ideal Schottky contact with CdSe NB. Our results suggest both the developed graphene patterning method and the as-fabricated CdSe nanobelt (NB)/graphene Schottky junction solar cells have reachable application prospect.
@article{arxiv.1011.4412,
title = {A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells},
author = {Yu Ye and Lin Gan and Lun Dai and Yu Dai and Xuefeng Guo and Hu Meng and Bin Yu and Zujin Shi and Guogang Qin},
journal= {arXiv preprint arXiv:1011.4412},
year = {2015}
}