Related papers: High-performance two-dimensional p-type transistor…
We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-{\kappa} gate dielectrics. The top-gated monolayer…
Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance of p-type FET based on PdSe$_2$ mono-layer using…
Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the…
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved…
Two-dimensional materials are considered for future quantum devices and are usually produced by extensive methods like molecular beam epitaxy. We report on the fabrication of field-effect transistors using individual ultra-thin lead sulfide…
In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates…
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction,…
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the…
Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great…
The electronic properties of a field-effect transistor with two different structures of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that…
Monolayer tungsten diselenide (WSe$_2$) is a leading candidate for nanoscale complementary logic. However, high defect densities introduced during thin-film growth and device fabrication have limited p-type transistor performance. Here, we…
We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D…
Two-dimensional (2D) semiconductors have attracted tremendous interests as natural passivation and atomically thin channels that could facilitate continued transistor scaling. However, air-stable 2D semiconductors with high performance were…
Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…
In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We…
Magnetisms in $p$-type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these monolayer semiconductors are ferromagnetic within a small…