Monolayer tungsten diselenide (WSe2) is a leading candidate for nanoscale complementary logic. However, high defect densities introduced during thin-film growth and device fabrication have limited p-type transistor performance. Here, we report a combined strategy of precursor-engineered chemical vapor deposition and damage-minimizing fabrication to overcome this limitation. By converting tungsten trioxide and residual oxyselenides into reactive suboxides before growth, and precisely regulating selenium delivery during deposition, we synthesize uniform, centimeter-scale monolayer WSe2 films with charged defect densities as low as 5×109 cm−2. Transistors fabricated from these films achieve record p-type on-state current up to 888μA⋅μm−1 at VDS=−1 V, matching leading n-type devices. This leap in material quality closes the p-type performance gap without exotic doping or contact materials, marking a critical step towards complementary two-dimensional semiconductor circuits.
@article{arxiv.2509.07299,
title = {High-current p-type transistors from precursor-engineered synthetic monolayer WSe$_2$},
author = {Anh Tuan Hoang and Kathryn Neilson and Kaikui Xu and Yucheng Yang and Stephanie M. Ribet and Tara Peña and Giulio D'Acunto and Young Suh Song and Anton E. O. Persson and William Millsaps and Colin Ophus and Matthew R. Rosenberger and Eric Pop and Andrew J. Mannix},
journal= {arXiv preprint arXiv:2509.07299},
year = {2025}
}