Related papers: Energy Efficient Tri-State CNFET Ternary Logic Gat…
The energy efficiency and power of a three-terminal thermoelectric nanodevice are studied by considering elastic tunneling through a single quantum dot. Facilitated by the three-terminal geometry, the nanodevice is able to generate…
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the…
In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy…
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…
High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art…
Current advances in emerging memory technologies enable novel and unconventional computing architectures for high-performance and low-power electronic systems, capable of carrying out massively parallel operations at the edge. One emerging…
Nanomagnetic memory and logic are currently seen as promising candidates to replace current digital computing architectures due to its superior energy-efficiency, non-volatility and propensity for highly dense and low-power applications. In…
A complete analytical prescription is given to perform three basic (OR, AND, NOT) and two universal (NAND, NOR) logic gates at nano-scale level using simple tailor made geometries. Two different geometries, ring-like and chain-like, are…
In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…
We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times…
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…
Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to…
The need set by a computational industry to increase processing power, while simultaneously reducing the energy consumption of data centers became a challenge for modern computational systems. In this work, we propose an optical…
Several nanoelectronic devices have been already proved. However, no architecture which makes use of them provides a feasible opportunity to build medium/large systems. Nanoarchitecture proposals only solve a small part of the problems…
Superconducting electronics are among the most promising alternatives to conventional CMOS technology thanks to the ultra-fast speed and ultra-high energy efficiency of the superconducting devices. Having a cryogenic control processor is…
Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling. Conventional silicon-based complementary…
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle…
The current through a carbon nanotube field-effect transistor (CNFET) with cylindrical gate electrode is calculated using the nonequilibrium Greens function method in a tight-binding approximation. The obtained result is in good agreement…
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…
Artificial neural networks (ANNs) have had an enormous impact on a multitude of sectors, from research to industry, generating an unprecedented demand for tailor-suited hardware platforms. Their training and execution is highly…