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Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
Qutrit (or ternary) structures arise naturally in many quantum systems, particularly in certain non-abelian anyon systems. We present efficient circuits for ternary reversible and quantum arithmetics. Our main result is the derivation of…
Reversible computation has been proposed as a future paradigm for energy efficient computation, but so far few implementations have been realised in practice. Quantum circuits, running on quantum computers, are one construct known to be…
We have developed a new superconducting digital technology, Reciprocal Quantum Logic, that uses AC power carried on a transmission line, which also serves as a clock. Using simple experiments we have demonstrated zero static power…
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…
Employing many-valued logic (MVL) data processing allows to dramatically increase the performance of computing circuits. Here we propose to employ ferroelectrics for the material implementation of MVL units basing on their ability to pin…
This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping and thickness on the voltage penalty of the transistor-LED…
We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
Construction of parallel logic gates at nano-scale level undoubtedly improves the efficiency of computable operations. In this work we put forward a new idea of designing two distinct logical operations {\em simultaneously} in the two…
A breadth-first search method for determining optimal 3-line circuits composed of quantum NOT, CNOT, controlled-V and controlled-V+ (NCV) gates is introduced. Results are presented for simple gate count and for technology motivated cost…
We demonstrate the use of optimal control to design two entropy-manipulating quantum gates which are more complex than the corresponding, commonly used, gates, such as CNOT and Toffoli (CCNOT): A 2-qubit gate called PE (polarization…
We develop in this paper a theoretical framework that applies to the intermediate regime between the Coulomb blockade and the Luttinger liquid behavior in multi-walled carbon nanotubes. Our main goal is to confront the experimental…
Superconducting electronics have emerged as a promising platform for advanced information processing, offering unique opportunities for on chip computation and signal manipulation at cryogenic temperatures. These devices hold particular…
In the recent years, reversible logic has emerged as a promising technology having its applications in low power CMOS, quantum computing, nanotechnology, and optical computing. The classical set of gates such as AND, OR, and EXOR are not…
The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit…
Ambipolar dual-gate transistors based on two-dimensional (2D) materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with suppressed…
We study the application of one nanoring driven by a laser field in different states of polarization in logic circuits. In particular we show that assigning boolean values to different state of the incident laser field and to the emitted…
The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…
We present a general approach to the computational design of nanostructured chemical sensors. The scheme is based on identification and calculation of microscopic descriptors (design parameters) which are used as input to a thermodynamic…