We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used in principle for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.
@article{arxiv.1312.6863,
title = {All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits},
author = {J. Renteria and R. Samnakay and C. Jiang and T. R. Pope and P. Goli and Z. Yan and D. Wickramaratne and T. T. Salguero and A. G. Khitun and R. K. Lake and A. A. Balandin},
journal= {arXiv preprint arXiv:1312.6863},
year = {2015}
}