Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as advanced smart window.
@article{arxiv.1705.00130,
title = {Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate},
author = {Takayoshi Katase and Kenji Endo and Hiromichi Ohta},
journal= {arXiv preprint arXiv:1705.00130},
year = {2017}
}