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We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
Exploiting the effects of quantum interference we put forward an idea of designing three primary logic gates, OR, AND and NOT, using a benzene molecule. Under a specific molecule-lead interface geometry, anti-resonant states appear which…
We describe a practical method of constructing quantum combinational logic circuits with basic quantum logic gates such as NOT and general $n$-bit Toffoli gates. This method is useful to find the quantum circuits for evaluating logic…
We construct logical gates via topology optimisation (aimed to solve a station problem of heat conduction) of a conductive material layout. Values of logical variables are represented high and low values of a temperature at given sites.…
Reversible logic design has become one of the promising research directions in low power dissipating circuit design in the past few years and has found its application in low power CMOS design, digital signal processing and nanotechnology.…
Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could significantly contribute to providing environmentally friendly…
We report the prediction and observation of supra-binary ferroelectricity in a ferroelectric nanowire (FNW) covered with a semi-cylindrical gate that provides an anisotropic electric field in the FNW. There are gate-voltage-driven…
Current Artificial Intelligence (AI) computation systems face challenges, primarily from the memory-wall issue, limiting overall system-level performance, especially for Edge devices with constrained battery budgets, such as smartphones,…
In recent years reversible logic has been considered as an important issue for designing low power digital circuits. It has voluminous applications in the present rising nanotechnology such as DNA computing, Quantum Computing, low power…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
Synthesis of quaternary quantum circuits involves basic quaternary gates and logic operations in the quaternary quantum domain. In this paper, we propose new projection operations and quaternary logic gates for synthesizing quaternary logic…
Nanomagnetic logic (NML) has attracted attention during the last two decades due to its promise of high energy efficiency combined with non-volatility. Data transmission in NML relies on Bennett clocking through dipole interaction between…
We report the superconducting properties of tantalum nitride (TaN) nanowires and TaN/copper (TaN/Cu) bilayer nanowires fabricated on 300 mm silicon wafers using CMOS-compatible processes. We evaluate how an integrated Cu heatsink modifies…
Optical logic has the potential to replace electronics with photonic circuits in applications for which optic-to-electronic conversion is impractical and for integrated all-optical circuits. Nonlinear optics in whispering gallery mode…
Proposed configurations for the implementation of graphene-based CNOT and Toffoli gates working at room temperature are presented. These two logic gates, essential for any quantum computing algorithm, involve ballistic Y junctions for qubit…
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…
We propose magnetic threshold-logic (MTL) design based on non-volatile spin-torque switches. A threshold logic gate (TLG) performs summation of multiple inputs multiplied by a fixed set of weights and compares the sum with a threshold. MTL…
This paper presents the design of an 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors, to evaluate its feasibility in electric…
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…