Related papers: Direct visualization of current induced spin accum…
The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an…
Spin accumulation induced by spin-orbit coupling is experimentally quantified in stack with in-plane magnetic anisotropy via the contribution of spin accumulation to Hall resistances. Using a biasing direct current the spin accumulation…
Two-dimensional topological insulators possess two counter propagating edge channels with op- posite spin direction. Recent experimental progress allowed to create ferromagnetic topological insulators realizing a quantum anomalous Hall…
A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged…
We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the first discovered 3D topological insulator Bi{1-x}Sb{x} [D. Hsieh et al., Nature 452, 970 (2008) Submitted 2007].…
In this theoretical investigation, we analyze light-induced nonlinear spin Hall currents in a gated single-layer 1T$'$-WTe$_2$, flowing transversely to the incident laser polarization direction. Our study encompasses the exploration of the…
Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…
The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin-orbit…
Here, we study diffusive spin transport in two dimensions and demonstrate that an intrinsic analog to a previously predicted extrinsic spin swapping effect, where the spin polarization and the direction of flow are interchanged due to…
We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the recently discovered 3D topological insulator Bi1-xSbx [D. Hsieh et al., Nature 452, 970 (2008)]. By modulating the…
Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the…
The surface states of topological insulators (TI) are protected by time reversal symmetry and they display intrinsic spin helicity where the momentum of the charge carriers decides their spin states. As a consequence, a current injected…
The generation of photocurrent in condensed matter is of main interest for photovoltaic and optoelectronic applications. Shift current, a nonlinear photoresponse, has attracted recent intensive attention as a dominant player of bulk…
We calculate the tunneling conductance \sigma between the surface states on the opposite sides of the ultra-thin film of a topological insulator in a parallel magnetic field B_y. The parallel magnetic produces a relative shift of the…
The Letter is analyzing bulk spin (moment) currents and spin (moment) accumulation at edges of a 2D topological insulator taking into account reflection from edges. Accumulation occurs only at edge states, which distinguish topological…
Magneto-optics based current imaging technique compares the nature of topological current distribution in a single crystal and thin film of topological insulator material, Bi2Se3. The single crystal, at low temperatures, has uniform…
We predict that unpolarized charge current injected into a ballistic thin film of prototypical topological insulator (TI) Bi$_2$Se$_3$ will generate a {\it noncollinear spin texture} $\mathbf{S}(\mathbf{r})$ on its surface. Furthermore, the…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
In topological insulators (TI), strong spin-orbit coupling results in non-trivial scattering processes of the surface states, whose effects include suppressed back scattering1, 2, 3, 4 weak anti-localization5, 6 and the possibility of an…