Related papers: Direct visualization of current induced spin accum…
We show that the electron spin polarization generated by an electrical current may have its direction controlled and magnitude amplified by periodic optical excitation. The electrical and optical spin control methods were combined and…
We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through…
We study spin accumulation in an aluminium island, in which the injection of a spin current and the detection of the spin accumulation are done by means of four cobalt electrodes that connect to the island through transparent tunnel…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…
The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip,…
\b{eta}-PdBi2 has attracted much attention for its prospective ability to possess simultaneously topological surface and superconducting states due to its unprecedented spin-orbit interaction (SOC). Whereas most works have focused solely on…
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an…
We show that the degree of spin polarization of photoelectrons from the surface states of topological insulators is 100% if fully-polarized light is used as in typical photoemission measurements, and hence can be significantly "higher" than…
Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second…
The substantial amount of recent research into spin torques has been accompanied by a revival of interest in the spin-Hall effect. This effect contributes to the spin torque in many materials, including topological insulator/ferromagnet…
We study spin-dependent transport through a spin diode in the presence of spin-flip by means of reduced density matrix approach. The current polarization and the spin accumulation are computed and influence of spin-flip on the current…
We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the…
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…
Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the…
We show that the spin-orbit interaction induced by the boundary confining potential causes opposite spin accumulations on the transverse edges in a zonal two-dimensional electron gas in the presence of external longitudinal electric field.…
Topological insulators (TIs) with spin momentum locked topological surface states (TSS) are expected to exhibit a giant spin-orbit torque (SOT) in the TI/ferromagnet systems. To date, the TI SOT driven magnetization switching is solely…
We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins…
We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…
We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…
When a charge current is injected into the surface state of a topological insulator (TI), the resulting shift of the spin-momentum-locked Fermi surface leads to the appearance of a net spin polarization. The helical spin structure of the…