Related papers: Direct visualization of current induced spin accum…
The interpretation of some recent measurements of spin-dependent voltage for which the electric conduction does not play a role rises some new fundamental questions about the effects of spin-dependent heat currents. A two spin-channel model…
Topological insulators have been successfully identified by spin-resolved photoemission but the spin polarization remained low (~20%). We show for Bi2Te3 that the in-gap surface state is much closer to full spin polarization with measured…
Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional…
The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads.…
We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated…
3D topological insulators are characterized by an insulating bulk and extended surface states exhibiting a helical spin texture. In this work, we investigate the hyperfine interaction between the spin-charge coupled transport of electrons…
Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the…
We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge…
Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse…
Conversion of spin to charge current was observed in SrTiO3 doped with Nd (Nd:STO), which exhibited a metallic behavior even with low concentration doping. The obvious variation of DC voltages for Py/Nd:STO, obtained by inverting the spin…
A useful experimental signature of the ordinary spin Hall effect is the spin accumulation it produces at the sample edges. The superspin Hall current [Phys. Rev. B 96, 094512 (2017)] is a transverse equilibrium spin current which is induced…
Direct observations of current-induced domain-wall propagation by spin-polarized scanning electron microscopy are reported. Current pulses move head-to-head as well as tail-to-tail walls in sub-micrometer Fe_{20}Ni_{80} wires in the…
One of the most striking manifestations of electronic properties of topological insulators is the dependence of the photocurrent direction on the helicity of circularly polarized optical excitation. The helicity dependent photocurrents,…
Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a non-local geometry. Unlike previous measurements that…
Spin pumping is becoming an established method to generate voltages from magnetic dynamics. The standard detection method of spin pumping is based on open circuit voltage measurement across ferromagnetic (FM) and non-magnetic (NM)…
We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from…
Spin-momentum locking, a key property of the surface states of three-dimensional topological insulators (3DTIs), provides a new avenue for spintronics applications. One consequence of spin-momentum locking is the induction of surface spin…
The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric…
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a…
All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit…