Spin-polarized tunneling current through a thin film of topological insulator in a parallel magnetic field
Mesoscale and Nanoscale Physics
2012-10-05 v3 Materials Science
Abstract
We calculate the tunneling conductance \sigma between the surface states on the opposite sides of the ultra-thin film of a topological insulator in a parallel magnetic field B_y. The parallel magnetic produces a relative shift of the in-plane momenta of the two surfaces states. An overlap between the shifted Fermi circles and their spin structure define an unusual dependence of the tunneling conductance \sigma(B_y) on the magnetic field. Because the spin of the electronic surface states in topological insulators is locked with momentum, the spin-polarization of the tunneling current can be controlled by magnetic field B_y.
Keywords
Cite
@article{arxiv.1206.4733,
title = {Spin-polarized tunneling current through a thin film of topological insulator in a parallel magnetic field},
author = {Sergey S. Pershoguba and Victor M. Yakovenko},
journal= {arXiv preprint arXiv:1206.4733},
year = {2012}
}
Comments
5 pages, 3 figures; Section V edited and extended