Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Jaesung Son; Karan Banerjee; Matthew Brahlek; Nikesh Koirala; Seoung-Ki Lee; Jong-Hyun Ahn; Seongshik Oh; Hyunsoo Yang

doi:10.1063/1.4833315

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Materials Science 2015-06-17 v1 Mesoscale and Nanoscale Physics

Authors: Jaesung Son , Karan Banerjee , Matthew Brahlek , Nikesh Koirala , Seoung-Ki Lee , Jong-Hyun Ahn , Seongshik Oh , Hyunsoo Yang

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Abstract

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

Keywords

topological insulator topological insulators charge carrier mobility

Cite

@article{arxiv.1311.2688,
  title  = {Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating},
  author = {Jaesung Son and Karan Banerjee and Matthew Brahlek and Nikesh Koirala and Seoung-Ki Lee and Jong-Hyun Ahn and Seongshik Oh and Hyunsoo Yang},
  journal= {arXiv preprint arXiv:1311.2688},
  year   = {2015}
}

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Appl. Phys. Lett. (2013)

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Abstract

Keywords

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