Related papers: Negative Capacitance as Digital and Analog Perform…
We present a theoretical study of (Ga,Mn)(As,C) diluted magnetic semiconductors with high C acceptor density that combines insights from phenomenological model and microscopic approaches. A tight-binding coherent potential approximation is…
Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…
Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…
In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to…
$\beta$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high…
Owing to their sensitivity to temperature fluctuations, normal metal-insulator-superconductor (NIS) junctions are leveraged in various thermal devices. This study illustrates that two NISIN reservoirs can achieve a measurable negative…
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire…
This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates.…
We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low…
Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling. Conventional silicon-based complementary…
Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model…
We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy shifts of order +/- 1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance…
The past few decades have seen exponential growth in capabilities of digital electronics primarily due to the ability to scale Integrated Circuits (ICs) to smaller dimensions while attaining power and performance benefits. That scalability…
The accessibility of both n-type and p-type MoS2 FET is necessary for complementary device applications involving MoS2. However, MoS2 PFET is rarely achieved due to pinning effect resulting high Rc at metal-MoS2 interface and the inherently…
Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility…
Energy conservative devices are the need of the modern technology which leads to the development of reversible logic. The synthesis of reversible logic has become an intensely studied area as it overcomes the problem of power dissipation…
We have theoretically investigated thermoelectric (TE) effects of narrow-gap single-walled carbon nanotubes (SWCNTs) with randomly substituted nitrogen (N) impurities, i.e., N-substituted (20,0) SWCNTs with a band gap of 0.497 eV. For such…
Labouvie \etal (\prl {\bf 115}, 050601, (20015)) recently demonstrated negative differential conductivity (NDC) in a multi-well Bose-Einstein condensate. They stated "we demonstrate that NDC originates from a nonlinear, atom number…