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Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing…
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…
This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demonstrated that MS induces a positive Vth shift in the device…
For simultaneously achieving the high-power factor and low lattice thermal conductivity of Si-Ge based thermoelectric materials, we employed, in this study, constructively modifying the electronic structure near the chemical potential and…
Modular multilevel converters have promising applications in clean energy, electric vehicles, and biomedical instrumentation, but need many modules to achieve fine output granularity, particularly of the voltage. Asymmetric multilevel…
We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage…
As technology scales down, the static power is expected to become a significant fraction of the total power. The exponential dependence of static power with the operating temperature makes the thermal profile estimation of high-performance…
Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system…
This paper presents design and control of dual-switch non-inverting buck-boost converter (CBB). This converter is designed to simplify the compatibility of electronic ballast with simple and low cost LED drivers. The converter provides…
Electric field dependent capacitance and dielectric loss in poly(3-hexylthiophene) are measured by precision capacitance bridge. Carrier mobility and density are estimated from fits to current-voltage and capacitance data. The capacitance…
The inherent stochasticity in many nano-scale devices makes them prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic…
This paper investigates the impact of technological constraints on passive elements in the design of inductively degenerated CMOS low-noise amplifiers (LNAs). A theoretical analysis is combined with circuit simulations in a 130-nm CMOS…
In this work, we investigate the electrical conductivity of carbon nanotubes (CNTs), with a particular focus on the effects of doping. Using a first-principles approach, we study the electronic structure, phonon dispersion, and…
Carbon Nanotube Field Effect Transistor (CNFET) is a promising new technology that overcomes several limitations of traditional silicon integrated circuit technology. In recent years, the potential of CNFET for analog circuit applications…
We investigate electronic structures and thermoelectric properties of recent synthetic half-Heusler $\mathrm{ZrNiPb}$ by using generalized gradient approximation (GGA) and GGA plus spin-orbit coupling (GGA+SOC). Calculated results show that…
We show that space-charge instabilities (electric field domains) in semiconductor superlattices are the attribute of absolute negative conductance induced by small constant and large alternating electric fields. We propose the efficient…
Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube…
We report on low-temperature photoconductivity (PC) in n-PbTe(Ga) epitaxial films prepared by the hot-wall technique on <111>-BaF_2 substrates. Variation of the substrate temperature allowed us to change the resistivity of the films from…
Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and thermal properties. As a result of suppressed phonon…
Electronic states in nanographite ribbons with zigzag edges are studied using the extended Hubbard model with nearest neighbor Coulomb interactions. The electronic states with the opposite electric charges separated along both edges are…