Related papers: Negative Capacitance as Digital and Analog Perform…
The lack of an easily realizable complementary circuit technology offering low static power consumption has been limiting the utilization of other semiconductor materials than silicon. In this publication, a novel depletion mode JFET based…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
Oscillation and frequency modulation have been leveraged for applications in detection (or sensing), data processing, and telemetry. This work provides a theoretical analysis of oscillation phenomena with negative impedance implemented…
Negative capacitance at the low-frequency domain and inverted hysteresis are familiar features in perovskite solar cells, where the origin is still under discussion. Here we use Impedance Spectroscopy to analyse these responses in…
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based…
We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage,…
The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we…
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…
Bolometers are most often biased by alternating current (AC) in order to get rid of low-frequency noises that plague direct current (DC) amplification systems. When stray capacitance is present, the respon- sivity of the bolometer differs…
An adaptive system for the suppression of vibration transmission using a single piezoelectric actuator shunted by a negative capacitance circuit is presented. It is known that using negative capacitance shunt, the spring constant of…
Whether porosity can effectively improve thermoelectric performance is still an open question. Herein we report that thermoelectric performance can be significantly enhanced by creating porosity in n-type Mg3.225Mn0.025Sb1.5Bi0.49Te0.01,…
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…
We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional…
In pixelized detectors, reducing power consumption in the front end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage…
This paper presents OptGM, an optimized gate merging method designed to mitigate negative bias temperature instability (NBTI) in digital circuits. First, the proposed approach effectively identifies NBTI-critical internal nodes, defined as…
The features of the $IV$ characteristics of metallic carbon nanotubes (m-NTs) in different experimental setups are studied using semi-classical Boltzmann transport equation together with the heat dissipation equation to account for…
We report on the existence of temperature induced negative differential conductivity (NDC) for electrons in gaseous nitrogen. The important role of superelastic rotational collisional processes in this phenomenon is highlighted. A model…
This paper presents a fully-integrated CMOS voltage reference designed in a 90 nm process node using low voltage threshold (LVT) transistor models. The voltage reference leverages subthreshold operation and near-weak inversion…
As transistor sizes reach the mesoscopic scale, the limitations of traditional methods in ensuring thermodynamic consistency have made power dissipation optimization in transistor amplifiers a critical challenge. Based on stochastic…
With the increase of the speed of computers, timing and power requirements are becoming crucial for memory devices. The main objective of the paper is to modify 180nm CMOS sense amplifier design by using memristive devices and improve the…