Related papers: High-Performance Flexible Magnetic Tunnel Junction…
Fiber jamming modules (FJMs) offer flexibility and quick stiffness variation, making them suitable for follow-the-leader (FTL) motions in continuum robots, which is ideal for minimally invasive surgery (MIS). However, their potential has…
Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
Flexible magnetic devices, i.e., magnetic devices fabricated on flexible substrates, are very attractive in application of detecting magnetic field in arbitrary surface, non-contact actuators, and microwave devices due to the stretchable,…
Arrays of Vortex Transitional (VT) memory cells with functional density up to $1 Mbit/cm^2$ have been designed, fabricated, and successfully demonstrated. This progress is due to recent advances in design optimization and in superconductor…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…
The growing market and massive use of Internet of Things nodes is placing unprecedented demands of energy efficient hardware for edge computing and microwave devices. In particular, magnetic tunnel junctions (MTJs), as main building blocks…
For high-performance superconducting quantum devices based on Josephson junctions (JJs) decreasing lateral sizes is of great importance. Fabrication of sub-\mu m JJs is challenging due to non-flat surfaces with step heights of up to several…
The development of compact and highly sensitive microwave detectors compatible with complementary-metal-oxide-semiconductor (CMOS) processes is an active research area but remains a major challenge in microwave technology. Spin-torque…
Magnetic droplets, a class of highly non-linear magnetodynamical solitons, can be nucleated and stabilized in nanocontact spin-torque nano-oscillators where they greatly increase the microwave output power. Here, we experimentally…
Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So…
A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons…
All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multi-functional devices. We investigate, by first-principles density…
Magnetic Tunnel Junctions (MTJs) have shown great promise as hardware sources for true random number generation (TRNG) due to their intrinsic stochastic switching behavior. However, practical deployment remains challenged by drift in…
The study of the effects of scaling on magnetic tunnel junction (MTJ) devices has become an important topic in the field of spin-based memory devices. Here, we investigate the effect of elastic dephasing on trilayer and pentalayer MTJ…
Conventional stress monitoring relies on episodic, symptom-focused interventions, missing the need for continuous, accessible, and cost-efficient solutions. State-of-the-art approaches use rigid, silicon-based wearables, which, though…
Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output dc voltage using magnetic tunnel junctions (MTJ) with…
In this paper we analyze different contributions to the magnetoresistance of magnetic tunneling junctions at low voltages. A substantial fraction of the resistance drop with voltage can be ascribed to variations of the density of states and…
Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF)…
We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a moderately low-k tunnelling dielectric (e.g. SiO2) can increase…