The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the tunnel barrier between magnetic electrodes, providing a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide-iron systems increases the resistance-area product and causes challenges of device-to-device variability and tunnel barrier degradation under high current. Here, we study using first principles narrower-bandgap scandium nitride tunneling properties and transport in magnetic tunnel junctions in comparison to magnesium oxide. These simulations demonstrate a high tunnel magnetoresistance in Fe/ScN/Fe MTJs via {\Delta}_1 and {\Delta}_2' symmetry filtering with low wavefunction decay rates, allowing a low resistance-area product. The results show that scandium nitride could be a new tunnel barrier material for magnetic tunnel junction devices to overcome variability and current-injection challenges.
@article{arxiv.2008.12770,
title = {Tunnel magnetoresistance in scandium nitride magnetic tunnel junctions using first principles},
author = {Suyogya Karki and Vivian Rogers and Priyamvada Jadaun and Daniel S. Marshall and Jean Anne C. Incorvia},
journal= {arXiv preprint arXiv:2008.12770},
year = {2020}
}