Modelling and design of FTJs as high reading-impedance synaptic devices

Riccardo Fontanini; Marco Massarotto; Ruben Specogna; Francesco Driussi; Mirko Loghi; David Esseni

Modelling and design of FTJs as high reading-impedance synaptic devices

Emerging Technologies 2021-05-04 v1

Authors: Riccardo Fontanini , Marco Massarotto , Ruben Specogna , Francesco Driussi , Mirko Loghi , David Esseni

Abstract

We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a moderately low-k tunnelling dielectric (e.g. SiO2) can increase the read current and the current dynamic range.

Keywords

ferroelectric tunnelling junction synaptic device modelling framework tunnelling dielectric read current current dynamic range

Cite

@article{arxiv.2105.00752,
  title  = {Modelling and design of FTJs as high reading-impedance synaptic devices},
  author = {Riccardo Fontanini and Marco Massarotto and Ruben Specogna and Francesco Driussi and Mirko Loghi and David Esseni},
  journal= {arXiv preprint arXiv:2105.00752},
  year   = {2021}
}

Comments

2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copy-righted component of this work in other works

Modelling and design of FTJs as high reading-impedance synaptic devices

Abstract

Keywords

Cite

Comments

Related papers