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Ferroelectric Tunneling Junctions for Edge Computing

Emerging Technologies 2024-02-08 v1 Applied Physics
Authors: Erika Covi , Quang T. Duong , Suzanne Lancaster , Viktor Havel , Jean Coignus , Justine Barbot , Ole Richter , Philip Klein , Elisabetta Chicca , Laurent Grenouillet , Athanasios Dimoulas , Thomas Mikolajick , Stefan Slesazeck
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Abstract

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.

Cite

@article{arxiv.2107.01853,
  title  = {Ferroelectric Tunneling Junctions for Edge Computing},
  author = {Erika Covi and Quang T. Duong and Suzanne Lancaster and Viktor Havel and Jean Coignus and Justine Barbot and Ole Richter and Philip Klein and Elisabetta Chicca and Laurent Grenouillet and Athanasios Dimoulas and Thomas Mikolajick and Stefan Slesazeck},
  journal= {arXiv preprint arXiv:2107.01853},
  year   = {2024}
}

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