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Antiferromagnetic Tunnel Junctions (AFMTJs) for In-Memory Computing: Modeling and Case Study

Hardware Architecture 2026-02-10 v1 Emerging Technologies

Abstract

Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice Landau-Lifshitz-Gilbert (LLG) dynamics with circuit-level modeling. SPICE-based simulations show that AFMTJs achieve ~8x lower write latency and ~9x lower write energy than conventional MTJs. When integrated into an in-memory computing architecture, AFMTJs deliver 17.5x average speedup and nearly 20x energy savings versus a CPU baseline-significantly outperforming MTJ-based IMC. These results establish AFMTJs as a compelling primitive for scalable, low-power computing.

Keywords

Cite

@article{arxiv.2602.08323,
  title  = {Antiferromagnetic Tunnel Junctions (AFMTJs) for In-Memory Computing: Modeling and Case Study},
  author = {Yousuf Choudhary and Tosiron Adegbija},
  journal= {arXiv preprint arXiv:2602.08323},
  year   = {2026}
}

Comments

Design, Automation and Test in Europe (DATE) 2026

R2 v1 2026-07-01T10:27:21.489Z