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We are developing DAQ for Si-pixel detectors by using a Slicon-On-Insulator (SOI) technology. This DAQ consists of firmware works on SEABAS (Soi EvAluation BoArd with Sitcp) DAQ board and software works on PC. We have been working on the…

Instrumentation and Detectors · Physics 2015-07-20 Ryutaro Nishimura , Yasuo Arai , Toshinobu Miyoshi

In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 {\mu}m CMOS fully depleted SOI process…

Instrumentation and Detectors · Physics 2019-11-14 S. Mitsui , Y. Arai , T. Miyoshi , A. Takeda

We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and…

Instrumentation and Methods for Astrophysics · Physics 2020-01-29 K. Hagino , K. Negishi , K. Oono , K. Yarita , T. Kohmura , T. G. Tsuru , T. Tanaka , S. Harada , K. Kayama , H. Matsumura , K. Mori , A. Takeda , Y. Nishioka , M. Yukumoto , K. Fukuda , T. Hida , Y. Arai , I. Kurachi , S. Kishimoto

0.2 um fully-depleted SOI technology has been developed a for X-ray pixel detectors. To improve the detector performance, some advanced process technologies are developing continuously. To utilize the high resistivity FZ-SOI, slow ramp up…

Instrumentation and Detectors · Physics 2015-11-18 Masao Okihara , Hiroki Kasai , Noriyuki Miura , Naoya Kuriyama , Yoshiki Nagatomo

We are developing a new readout board with a newer generation field-programmable gate array (FPGA) and the 10-gigabit ethernet to improve the performance and usability of the current readout board based on the 1-gigabit Ethernet. In this…

Instrumentation and Detectors · Physics 2022-12-12 Ryutaro Nishimura , Shunji Kishimoto , Yasuo Arai , Toshinobu Miyoshi

We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…

SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor…

The silicon-on-insulator pixel (SOIPIX) detector is a unique monolithic-structure imaging device currently being developed by the SOIPIX group led by the High Energy Accelerator Research Organization (KEK). The detector team at KEK Photon…

Instrumentation and Detectors · Physics 2025-10-30 Ryutaro Nishimura , Noriyuki Igarashi , Daisuke Wakabayashi , Yuki Shibazaki , Yoshio Suzuki , Keiichi Hirano , Yasuo Arai

A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event…

Instrumentation and Detectors · Physics 2015-07-27 Sumeet Shrestha , Hiroki Kamehama , Shoji Kawahito , Keita Yasutomi , Keiichiro Kagawa , Ayaki Takeda , Takeshi Go Tsuru , Yasuo Arai

This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing…

Instrumentation and Detectors · Physics 2015-07-06 Szymon Bugiel , Roma Dasgupta , Sebastian Glab , Marek Idzik , Jakub Moron , Piotr Julian Kapusta , Wojciech Kucewicz , Michal Turala

We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV.…

We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented…

A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…

Instrumentation and Detectors · Physics 2008-07-02 Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay E. Glesener , Serena Mattiazzo , Chinh Vu

The Silicon-On-Insulator PIXel (SOIPIX) detector is a unique monolithic structure imaging device currently being by the SOIPIX group, led by the High Energy Accelerator Research Organization (KEK). Our detector team at the KEK Photon…

An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a…

Instrumentation and Detectors · Physics 2015-12-09 Tomasz Hemperek , Tetsuichi Kishishita , Hans Krüger , Norbert Wermes

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated…

Instrumentation and Detectors · Physics 2009-05-08 Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay Glesener , Serena Mattiazzo , Chinh Qu Vu

A silicon pixel detector with fine pitch size of 19x19 um, developed base on SOI (silicon on insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative way to particle beam tests, the laser pulses…

Instrumentation and Detectors · Physics 2016-08-03 Yi Liu , Yunpeng Lu , Xudong Ju , Qun Ouyang

We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic…

The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low…

Instrumentation and Detectors · Physics 2021-04-13 Jing Dong , Yunpeng Lu , Zhigang Wu , Yang Zhou , Qun Ouyang

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…

Instrumentation and Detectors · Physics 2009-06-23 Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay Glesener , Serena Mattiazzo , Chinh Vu
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