Related papers: A Silicon Cluster Based Single Electron Transistor…
We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. This permits…
We find an analytical expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of a grain are all of the same order. We consider the model of equidistant energy levels…
Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity…
We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
We use a simultaneous flow of ethylene and hydrogen gases to grow single wall carbon nanotubes by chemical vapor deposition. Strong coupling to the gate is inferred from transport measurements for both metallic and semiconducting tubes. At…
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…
We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain…
It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are…
In this article we review the thermoelectric properties of three terminal devices with Coulomb coupled quantum dots (QDs) as observed in recent experiments [1,2]. The system we consider consists of two Coulomb-blockade QDs one of which can…
While Single Molecule Transistors have been employed in laboratory research for a number of years, there remain many details related to charge transport that have yet to be delineated. We have used the technique of electromigration to…
Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high…
We propose a cyclic refrigeration principle based on mesoscopic electron transport. Synchronous sequential tunnelling of electrons in a Coulomb-blockaded device, a normal metal-superconductor single-electron box, results in a cooling power…
Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear…
We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
We have used an electromigration technique to fabricate C$_{60}$-based single-molecule transistors. We detail the process statistics and the protocols used to infer the successful formation of a single-molecule transistor. At low…