Related papers: A Silicon Cluster Based Single Electron Transistor…
Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling…
We act on the suggestion that an excitonic insulator state might separate---at very low temperatures---a semimetal from a semiconductor and ask for the nature of these transitions. Based on the analysis of electron-hole pairing in the…
We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
We investigate the effect of Zeeman-splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single electron transistors (SETs). In the above-gap transport the interplay of Coulomb blockade and Zeeman-splitting…
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by…
A possibility to perform single-electron computing without dissipation in the array of tunnel-coupled quantum dots is studied theoretically, taking the spin gate NOT (inverter) as an example. It is shown that the logical operation can be…
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we…
We derive a closed expression for the finite-temperature conductance of a Coulomb-blockade quantum dot in the presence of an exchange interaction and a parallel magnetic field. Parallel-field dependence of Coulomb-blockade peak position has…
We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully-transmitting mode, a system previously thought to be well described without invoking Coulomb interactions. At…
We study low-temperature transport through a Coulomb blockaded quantum dot (QD) contacted by a normal (N), and a superconducting (S) electrode. Within an effective cotunneling model the conduction electron self energy is calculated to…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information…
Spin-flips are one of the limiting factors for spin-based information processing. We demonstrate a transport approach for determining the spin-flip rates of a self-assembled InAs double quantum dot occupied by a single electron. In such…
Large assemblies of self-organized aluminum nanoclusters embedded in an oxide layer are formed on graphene templates and used to build tunnel-junction devices. Unexpectedly, single-electron-transport behavior with well-defined Coulomb…
Making full usage of bipolar transport in single-wall carbon nanotube (SWCNT) transistors could permit the development of two-in-one quantum devices with ultra-short channels. We report on clean $\sim$10 to 100 nm long suspended SWCNT…
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel…
We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric…
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…
We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect…