Related papers: A Silicon Cluster Based Single Electron Transistor…
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy…
A quantum dot has been etched in bilayer graphene connected by two small constrictions to the leads. We show that this structure does not behave like a single quantum dot but consists of at least three sites of localized charge in series.…
We study interaction effects on transport through a small metallic cluster connected to two ferromagnetic leads (a single-electron spin-valve transistor) in the "orthodox model" for the Coulomb blockade. The non-local exchange between the…
The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot…
The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics…
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the…
We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on…
We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single electron level we find…
Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions.…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very…
We investigated electron transport through ultra small Si quantum dots. We found that the $B$-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states…
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…
The techniques of colloidal chemistry permit the routine creation of semiconductor nanocrystals, whose dimensions are much smaller than those that can be realized using lithographic techniques. The sizes of such nanocrystals can be varied…
We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length…
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive…
We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined…
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…