Related papers: Magnetoresistance originated from charge-spin conv…
The anomalous Hall effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also…
We present a model for a negative magnetoresistance (MR) that would develop in a material with many ferromagnetic domains even if the individual domains have no magnetoresistance and even if there is no boundary resistance. The negative MR…
To achieve efficient anti-damping switching of nanoscale magnetic memories with perpendicular magnetic anisotropy using spin-orbit torque requires that the anti-damping spin-orbit torque have a strong out-of-plane component. The spin…
A magnetic "spin filter" tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance…
The magnetization switching of a thin ferromagnetic layer placed on top of a heavy metal (such as Pt, Ta or W) driven by an in-plane current has been observed in recent experiments. The magnetization dynamics of these processes is studied…
We clarify the origin of what is sometimes called the "topological anomalous Hall effect," provide analytical formulas to compute all the contributions to the Hall conductivity in the presence of Kondo-coupled spins and spin orbit coupling.…
The kagome lattice antiferromagnets Mn$_3$X(= Sn, Ge) have a noncollinear 120$^\circ$ ordered ground state, which engenders a strong anomalous Hall response. It has been shown that this response is linked to the magnetic order and can be…
Using multiple scattering theory, we show that the generally accepted expression of transverse resistivity in magnetic systems that host skyrmions, given by the linear superposition of the ordinary (OHE), the anomalous (AHE) and the…
Recent studies evidence the emergence of asymmetric electron transport in layered conductors owing to the interplay between electrical conductivity, magnetization, and the spin Hall or Rashba- Edelstein effects. Here, we investigate the…
We present a microscopic theory of the anomalous Hall effect in metallic multi-band ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian…
Spin pumping in ferromagnets provides a source of pure spin currents. Via the inverse spin Hall effect a spin current is converted into a charge current and a corresponding detectable DC-voltage. The ratio of injected spin current to…
Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier…
We report on a topological Hall effect possibly induced by scalar spin chirality in a quasi-two- dimensional helimagnet Fe$_{1+x}$Sb. In the low-temperature region where the spins on interstitial- Fe (concentration $x=0.3$) intervening the…
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively…
We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin-valve consists of a thin superconducting film sandwiched…
This study calculated the magnetoresistance (MR) in the Dirac electron system, Dressellhaus-Kip-Kittel (DKK) model, and nodal-line semimetals based on the semiclassical Boltzmann theory, with particular focus on the detailed energy…
We find that the Hall effect resistivity ($\rho_{xy}$) of thin films of \lsmo\ varies as a function of the angle $\theta$ between the applied magnetic field and the film normal as $\rho_{xy}=a\cos \theta + b\cos 3\theta$, where $|b|$…
While altermagnetic materials are characterized by a vanishing net magnetic moment, their symmetry in principle allows for the existence of an anomalous Hall effect (AHE). Here we introduce a model with altermagnetism in which the emergence…
Recently, antiferromagnetic (AF) materials have attracted rapid attention, because they are considered as outstanding candidates to replace the widely used ferromagnets in the next generation of spintronics. We propose a magnetoresistance…
We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the…