English

Angular dependence of the Hall effect of lsmo films

Strongly Correlated Electrons 2015-06-12 v1 Materials Science

Abstract

We find that the Hall effect resistivity (ρxy\rho_{xy}) of thin films of \lsmo\ varies as a function of the angle θ\theta between the applied magnetic field and the film normal as ρxy=acosθ+bcos3θ\rho_{xy}=a\cos \theta + b\cos 3\theta, where b|b| increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term bb, suggesting it is a manifestation of an intrinsic transport property.

Keywords

Cite

@article{arxiv.1211.1160,
  title  = {Angular dependence of the Hall effect of lsmo films},
  author = {Netanel Naftalis and Noam Haham and Jason Hoffman and Matthew S. J. Marshall and C. H. Ahn and Lior Klein},
  journal= {arXiv preprint arXiv:1211.1160},
  year   = {2015}
}