The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)

Y. Bason; J. Hoffman; C. H. Ahn; L. Klein

doi:10.1103/PhysRevB.79.092406

The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)

Materials Science 2015-05-13 v1

Authors: Y. Bason , J. Hoffman , C. H. Ahn , L. Klein

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Abstract

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to 4th order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the bi-axial magnetocrystalline anisotropy in our samples.

Keywords

magnetoresistance tensor anisotropic magnetoresistance planar Hall effect La0.8Sr0.2MnO3 epitaxial thin films magnetocrystalline anisotropy

Cite

@article{arxiv.0810.4679,
  title  = {The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)},
  author = {Y. Bason and J. Hoffman and C. H. Ahn and L. Klein},
  journal= {arXiv preprint arXiv:0810.4679},
  year   = {2015}
}

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