We present a microscopic theory of the anomalous Hall effect in metallic multi-band ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian disorder, the anomalous Hall effect is expressed solely in terms of the electronic band structure of the host material. Our theory handles systematically the interband-scattering coherence effects. We demonstrate the method in the two-dimensional Rashba and three-dimensional ferromagnetic (III,Mn)V semiconductor models. Our formalism is directly amenable to ab initio treatments for a wide range of ferromagnetic metals.
@article{arxiv.1003.2626,
title = {Anomalous Hall Effect in Disordered Multiband Metals},
author = {Alexey A. Kovalev and Jairo Sinova and Yaroslav Tserkovnyak},
journal= {arXiv preprint arXiv:1003.2626},
year = {2010}
}