Related papers: Field emission from self-catalyzed GaAs nanowires
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial…
Field emission from nano-structured emitters primarily takes place from the tips. Using recent results on the variation of enhancement factor around the apex (Biswas et al, Ultramicroscopy 185, 1-4 (2018)), analytical expressions for…
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…
The paper reports on top-down nanofabricated Ni3Si2 nanowires and tests of their electron field emission capabilities. The results include low turn on electric field, moderate work function, and the field enhancement factor, customizable…
We report on optical experiments performed on individual GaAs nanowires and the ma- nipulation of their temporal emission characteristics using a surface acoustic wave. We find a pronounced, characteristic suppression of the emission…
Field emisison of electrons crucially depends on the enhancement of the local electric field around nanotips. The enhancement is maximum when individual emitter-tips are well separated. As the distance between two or more nanotips…
Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high…
III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…
Pulsed field emission from cold carbon-nanotube cathodes placed in a radiofrequency resonant cavity was observed. The cathodes were located on the backplate of a conventional $1+\frac{1}{2}$-cell resonant cavity operating at 1.3-GHz and…
In the quasi-planar approximation of field emission, the potential energy due to an external electrostatic field $E_0$ is expressed as $-e \gamma E_0 \Delta s$ where $\Delta s$ is the perpendicular distance from the emission site and…
GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…
We present a scanning magnetic force sensor based on an individual magnet-tipped GaAs nanowire (NW) grown by molecular beam epitaxy. Its magnetic tip consists of a final segment of single-crystal MnAs formed by sequential crystallization of…
We have studied microwave emission from a current-perpendicular-to-plane pseudo spin valve nanopillars with Heusler alloy Co2Fe(Ga0.5Ge0.5) electrodes. Large emission amplitude exceeding 150 nV/Hz^0.5, partly owing to the large…
The present letter extends the prior findings on self-induced heating of solid state field emission devices. It was found that a vacuum diode (base pressure $\sim10^{-9}$ Torr), that makes use of graphite-rich polycrystalline diamond as…
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si…
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis,…
The field enhancement factor at the emitter tip and its variation in a close neighbourhood determines the emitter current in a Fowler-Nordheim like formulation. For an axially symmetric emitter with a smooth tip, it is shown that the…
We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows…
We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of…