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Related papers: Field emission from self-catalyzed GaAs nanowires

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We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP…

Mesoscale and Nanoscale Physics · Physics 2013-07-02 Yuri M. Brovman , Joshua P. Small , Yongjie Hu , Ying Fang , Charles M. Lieber , Philip Kim

We have demonstrated effective fringe field control of one-dimensional electron gas (1-DEG) in AlGaN/GaN lateral nanowires. The nanowires are site controlled and formed by a combination of dry and anisotropic wet etching. The nanowire…

Mesoscale and Nanoscale Physics · Physics 2016-06-09 K. S. Akhil , Dolar Khachariya , Mudassar Meer , Swaroop Ganguly , Dipankar Saha

A low temperature hydrothermal route has been developed, and pure phase Ba$_2$Ni$_3$F$_{10}$ nanowires have been successfully prepared under the optimized conditions. Under the 325 nm excitation, the Ba$_2$Ni$_3$F$_{10}$ nanowires exhibit…

Materials Science · Physics 2016-11-18 Shuang Zhou , Ji Wang , Yakui Weng , Zhangting Wu , Zhenhua Ni , Qingyu Xu , Jun Du , Shuai Dong

We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of…

Mesoscale and Nanoscale Physics · Physics 2015-12-10 Bernd Jenichen , Oliver Brandt , Carsten Pfueller , Pinar Dogan , Mathias Knelangen , Achim Trampert

We investigate high-field transport in graphene nanoribbons (GNRs) on SiO2, up to breakdown. The maximum current density is limited by self-heating, but can reach >3 mA/um for GNRs ~15 nm wide. Comparison with larger, micron-sized graphene…

Mesoscale and Nanoscale Physics · Physics 2011-06-29 Albert D. Liao , Justin Z. Wu , Xinran Wang , Kristof Tahy , Debdeep Jena , Hongjie Dai , Eric Pop

The TGRS experiment on board the Wind spacecraft has many advantages as a sky monitor --- broad field of view (~2 pi) centered on the south ecliptic pole), long life (1994-present), and stable low background and continuous coverage due to…

We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias…

Growth of mono-dispersed AlGaN nanowires of ternary wurtzite phase is reported using chemical vapour deposition technique in the vapour-liquid-solid process. The role of distribution of Au catalyst nanoparticles on the size and the shape of…

This work is devoted to the investigation of the nonstationary problem of the thermal conductivity of a nanoemitter on the surface of a massive copper cathode when a field electron emission current passes through it. At the same time, the…

Applied Physics · Physics 2023-05-08 M. Diachenko , S. Lebedynskyi , R. Kholodov

The integration of advanced optoelectronic properties in nanoscale devices of group III nitride can be realized by understanding the coupling of charge carriers with optical excitations in these nanostructures. The native defect induced…

Materials Science · Physics 2017-07-11 Santanu Parida , Avinash Patsha , Santanu Bera , Sandip Dhara

We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they…

We explore the dynamics and directionality of spontaneous emission from self-assembled In(Ga)As quantum dots into TE-polarised guided modes in GaAs two-dimensional photonic crystal waveguides. The local group velocity of the guided…

We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on…

Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 D. Graf , M. Frommenwiler , P. Studerus , T. Ihn , K. Ensslin , D. C. Driscoll , A. C. Gossard

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…

Mesoscale and Nanoscale Physics · Physics 2012-01-19 Kristian Storm , Gustav Nylund , Lars Samuelson , Adam P. Micolich

We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…

Applied Physics · Physics 2024-08-19 C. P. Dobney , A. Nasir , P. See , C. J. B. Ford , J. P. Griffiths , C. Chen , D. A. Ritchie , M. Kataoka

We have investigated the photocarrier charge transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si(111) substrates. Analysis of the luminescence intensity spatial…

We demonstrate a nanotip electron source based on a graded index multimode silica optical fiber, tapered at one end to a radius of curvature r ~ 50 nm and coated with a thin film of gold. We report observation of laser-induced electron…

Applied Physics · Physics 2020-08-04 Sam Keramati , Ali Passian , Vineet Khullar , Herman Batelaan

Structural, electronic and thermodynamic properties of native defects in GaS and GaSe monolayers are investigated by means of accurate ab-initio calculations. Based on their charge transition levels we assess the influence of the studied…

Materials Science · Physics 2023-04-27 Daniel Barragan-Yani , Jonathan M. Polfus , Ludger Wirtz

We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with…

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