Related papers: Heat-Assisted Multiferroic Solid-State Memory
Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) - is a challenge in fundamental science and also important for technological device…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
The hydrostatic pressure is expected to be an effective knob to tune the magnetostructural phase transitions of hexagonal MMX alloy. In this study, magnetization measurements under hydrostatic pressure were performed on a MMX martensitic…
The magneto-electrocaloric effect which can be defined as the coupling between magnetocaloric and electrocaloric effects attracts currently considerable attention due to the advantages provided by the caloric effect in designing solid-state…
Thermally-assisted ultra-fast magnetization reversal in a DC magnetic field for magnetic multilayer thin films with perpendicular anisotropy has been investigated in the time domain using femtosecond laser heating. The experiment is set-up…
Magneto-structural instability in the ferromagnetic shape memory alloy of composition Ni$_2$Mn$_{1.4}$Sn$_{0.6}$ is investigated by transport and magnetic measurements. Large negative magnetoresistance is observed around the martensitic…
Predicting solid-solid phase transitions remains a long-standing challenge in materials science. Solid-solid transformations underpin a wide range of functional properties critical to energy conversion, information storage, and thermal…
The dependence of thermally induced spontaneous magnetization reversal on time-dependent cooling protocols was studied. Slower cooling and longer waiting close to the N\`{e}el temperature of the antiferromagnet ($T_N$) enhances the…
The primary impediment to continued downscaling of traditional charge-based electronic devices in accordance with Moore's law is the excessive energy dissipation that takes place in the device during switching of bits. One very promising…
Here, we describe the prototype for precisely scaled temperature assisted magnetic recording scheme utilizing the characteristics of thermo-remnant magnetization (TRM) in bulk SmCrO$_3$ as a memory media. The TRM response can be exploited…
B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the N\'eel order via AF-F phase transition and recent experimental observation of the…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Previous experiments in compensated magnets have demonstrated a potential for approaching the limit of fastest and least-dissipative operation of digital memory bits. However, the analog route has been virtually unexplored at (sub)ps time…
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power…
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient…
BaMF4 (M=Fe, Co, Ni and Mn) family are typical multiferroic materials, having antiferromagnetism at around liquid nitrogen temperature. In this work, polycrystalline BaFeF4 has been prepared by solid state reaction. The slight deficiency of…
Laser-induced demagnetization is theoretically studied by explicitly taking into account interactions among electrons, spins and lattice. Assuming that the demagnetization processes take place during the thermalization of the sub-systems,…
Magnetic phase diagrams of the metamagnetic shape memory alloys Ni50-xCoxMn31.5Ga18.5 (x = 9 and 9.7) were produced from high-field magnetization measurements up to 56 T. For both compounds, magnetic field induced martensitic…
Electrical resistivity and ac-susceptibility measurements under high pressure were carried out in high-quality single crystals of $\alpha$-Mn. The pressure-temperature phase diagram consists of an antiferromagnetic ordered phase (0<$P$<1.4…