B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the N\'eel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only. Our demonstration of writing and reading at ambient room temperature opens a realistic pathway towards operational antiferromagnetic memory devices.
Cite
@article{arxiv.1507.06138,
title = {Room temperature write-read operations in antiferromagnetic memory},
author = {Takahiro Moriyama and Noriko Matsuzaki and Kab-Jin Kim and Ippei Suzuki and Tomoyasu Taniyama and Teruo Ono},
journal= {arXiv preprint arXiv:1507.06138},
year = {2015}
}