Related papers: Heat-Assisted Multiferroic Solid-State Memory
Recent studies have shown that nonlinear magnetization dynamics excited in nanostructured ferromagnets are applicable to brain-inspired computing such as physical reservoir computing. The previous works have utilized the magnetization…
Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of fundamental interest for the development of novel memory devices that allow for electrical writing and non-destructive magnetic readout operation. The…
Altermagnets represent a novel magnetic phase with transformative potential for ultrafast spintronics, yet efficient control of their magnetic states remains challenging. We demonstrate an ultra-low-power electric-field control of…
In multiferroic BiFeO$_3$ a cycloidal antiferromagnetic structure is coupled to a large electric polarization at room temperature, giving rise to magnetoelectric functionality that may be exploited in novel multiferroic-based devices. In…
We study the two dimensional quantum Heisenberg antiferromagnet on the square lattice with easy-axis exchange anisotropy. By the semiclassical method called pure-quantum self-consistent harmonic approximation we analyse several…
Precise thermal expansion and magnetostriction studies of the intermetallic compound Eu$_2$CuSi$_3$ in the temperature range between 5 and 300 K are presented. A clear sign of magnetic second order phase transition at the ferromagnetic…
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable…
Recently reported measurements of specific heat on the compound Mn-formate di-Urea (Mn-f-2U) by Takeda et al. [Phys. Rev. B 63, 024425 (2001)] are considered. As a model to describe the overall thermodynamic behavior of such compound, the…
The antiferromagnetic to ferromagnetic phase transition in B2-ordered FeRh is imaged in laterally confined nanopatterned islands using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. The resulting magnetic…
Temperature-dependent magnetic properties of Nd$_2$Fe$_{14}$B permanent magnets, i.e., saturation magnetization $M_\text{s}(T)$, effective magnetic anisotropy constants $K_i^\text{eff}(T)$ ($i=1,2,3$), domain wall width $\delta_w(T)$, and…
It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices.…
We report a novel feature of the temperature induced magnetization jump observed along the a-axis of the GdVO3 single crystal at temperature TM = 0.8 K. Below TM, the compound shows no coercivity and remanent magnetization indicating a…
Magnetoelectric (ME) multiferroics enable efficient interconversion of electrical and magnetic signals, offering pathways toward substantial reduction of power consumption in next-generation computing and information technologies. However,…
X-ray magnetic circular dichroism at the Er M4,5 edge is used to study the switching behavior of the hard ErFe2 layers in an epitaxial [ErFe2(70{\AA})/YFe2 (150{\AA})]{\times}25 exchange-spring superlattice. Magnetic hysteresis loops for…
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
We have measured magnetic and transport response on the polycrystalline La$_{5/8-y}$Pr$_y$Ca$_{3/8}$MnO$_3$ ($y=0.30$, average grain size 2 microns) compound. In the temperature range where ferromagnetic metallic and insulating regions…
The ever-increasing demand for fast, reliable, and energy-efficient information storage continues to push magnetic memory technologies toward their fundamental limits. Conventional scaling strategies, which rely on reducing bit size,…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
In information technology devices, current-driven state switching is crucial in various disciplines including spintronics, where the contribution of heating to the switching mechanism plays an inevitable role. Recently, current-driven…
Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been…